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Structural properties
Pressure sensing chip: silicon wires: a gold wire
Package housing: PPS pin Material: copper silver Net weight: about 1 gram electrical properties
¡á Power supply: ¡Â10V DC or ¡Â3 0mA DC ¡á Input impedance:. 4kQ ~ 6k Q ¡á Output Impedance: 4kQ ~ 6kQ
¡á Insulation resistance: 100M Q, 100VDC
Allow overload:
0 ~ 10Kka - 200kPa: 2 times full scale
0 ~ 500kPa..1000kPa: 1.5 times full scale
Reference conditions
Measuring medium: air
Medium temperature: (25 ± 1). C ambient temperature: (25 ± 1). C
Vibration: 0.1g (1m / s ^) Max humidity: (50% Disabled 10%) RH Power: (5 Soil 0.005) V DC
Features
Measurement range -100kPa ~ 1 0kPa ... 1000kPaMEMS art form gauge
SOP or DIP package
For non-corrosive gas or liquid working temperature range: -40C ~ + 125C chip select direction back pressure chamber pressure pin
Applications
Automotive electronics electronic blood pressure monitors, ventilators, oxygen machines, alcohol testers, tire pressure monitor and other medical field meter, MAP sensors, etc.
Massage, massage chairs, air beds and other areas of sports and fitness equipment
WASHING MACHINE, beer, coffee machines, emergency lights, vacuum cleaners, pneumatic components
product description
XGZP type piezoresistive pressure sensitive element is a pressure sensor suitable for biomedical, automotive electronics, which is part of a core processing using MEMS technology piezoresistive pressure sensing chip. The chip consists of a pressure-sensitive film and integrated in a resilient membrane. Four resistors on the composition of four piezoresistors formed a Wheatstone bridge configuration, when the pressure acting when the bridge will have a resilient membrane and applied pressure into a voltage output signal that is linearly proportional.
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